Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells
Identifieur interne : 00C044 ( Main/Repository ); précédent : 00C043; suivant : 00C045Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells
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Abstract
Distributions of built-in potential in GaInP2/GaAs tandem-junction solar cells were investigated by scanning Kelvin probe microscopy. Two states of potential distribution resulting from flattening of band bending and charge accumulation on either the top or bottom p-n junction were observed under short circuit, depending on the illumination spectra. With an external bias voltage, the voltage change always happened on the junction with the charge accumulation, and the potential distribution between the two states became less sensitive to illumination spectra. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Distribution of built-in electrical potential in GaInP<sub>2</sub>/GaAs tandem-junction solar cells</title><author><name sortKey="Jiang, C S" uniqKey="Jiang C">C.-S. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden</wicri:cityArea></affiliation></author><author><name sortKey="Friedman, D J" uniqKey="Friedman D">D. J. Friedman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden</wicri:cityArea></affiliation></author><author><name sortKey="Geisz, J F" uniqKey="Geisz J">J. F. 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Romero</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden</wicri:cityArea></affiliation></author><author><name sortKey="Al Jassim, M M" uniqKey="Al Jassim M">M. M. Al Jassim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden, Colorado 80401</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevard Golden</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0352366</idno><date when="2003-08-25">2003-08-25</date><idno type="stanalyst">PASCAL 03-0352366 AIP</idno><idno type="RBID">Pascal:03-0352366</idno><idno type="wicri:Area/Main/Corpus">00CC78</idno><idno type="wicri:Area/Main/Repository">00C044</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>EBIC</term><term>Electric potential</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Scanning probe microscopy</term><term>Solar cells</term><term>Ternary semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8460J</term><term>7361E</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur ternaire</term><term>Semiconducteur III-V</term><term>Cellule solaire</term><term>Microscopie champ proche</term><term>EBIC</term><term>Potentiel électrique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Distributions of built-in potential in GaInP<sub>2</sub>/GaAs tandem-junction solar cells were investigated by scanning Kelvin probe microscopy. Two states of potential distribution resulting from flattening of band bending and charge accumulation on either the top or bottom p-n junction were observed under short circuit, depending on the illumination spectra. With an external bias voltage, the voltage change always happened on the junction with the charge accumulation, and the potential distribution between the two states became less sensitive to illumination spectra. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Distribution of built-in electrical potential in GaInP<sub>2</sub>/GaAs tandem-junction solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>JIANG (C.-S.)</s1></fA11><fA11 i1="02" i2="1"><s1>FRIEDMAN (D. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>GEISZ (J. 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